2SK4093_15 Datasheet, PDF (7/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

2SK4093
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
0.2
0.1
0.1 _0.05
0.02
0.01
1shot
pulse
0.01
10 µ 100 µ 1 m
θch – a (t) = γ s (t) • θch – a
θch – a = 139°C/W, Ta = 25°C
P_DM
D = ^PW
T
PW
T
10 m 100 m 1
10
Pulse Width PW (s)
100 1000 10000
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
4V
D.U.T.
Vout
Monitor
R_L
V_DD
= 125 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
90%
tr
td(off)
tf
REJ03G1534-0300 Rev.3.00 Feb 01, 2008
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