2SK3576_15 Datasheet, PDF (7/10 Pages) Renesas Technology Corp – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
90
VGS = 2.5 V
Pulsed
80
TA = 125°C
70
75°C
60
25°C
50
−25°C
40
30
0.01
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
80
VGS = 4.5 V
Pulsed
70
60
TA = 125°C
50
75°C
25°C
40
−25°C
30
20
0.01
0.1
1
10
100
ID - Drain Current - A
1000
SWITCHING CHARACTERISTICS
VDD = 10 V
VGS = 4.0 V
RG = 10 Ω
tr
tf
100
td(off)
td(on)
10
0.1
1
10
ID - Drain Current - A
2SK3576
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
80
VGS = 4.0 V
Pulsed
70
60
TA = 125°C
75°C
50
25°C
40
−25°C
30
20
0.01
0.1
1
10
100
ID - Drain Current - A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
VGS = 0 V
f = 1 MHz
C iss
100
Coss
C rss
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
Pulsed
10
VGS = 0 V
1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
VSD - Source to Drain Voltage - V
Data Sheet D15939EJ1V0DS
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