2SJ673 Datasheet, PDF (7/10 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
ID = −18 A
Pulsed
40
VGS = −4.0 V
30
−4.5 V
−10 V
20
10
0
-50
0
50
100
150
Tch - Channel Temperature - °C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
VGS = 0 V
f = 1 MHz
10000
Ciss
1000
Coss
100
-0.1
Crss
-1
-10
VDS - Drain to Source Voltage - V
-100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60
55
50
45
40
35
30
25
20
15
10
5
0
0
VDD = −48 V
−30 V
−12 V
VGS
VDS
20
40
60
12
ID = −25 A ₁₁
10
9
8
7
6
5
4
3
2
1
0
80 100
QG - Gate Charge - nC
2SJ673
-1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
-100 _{VGS = −10 V}
-10
−4 V
-1
0V
-0.1
-0.01
-0.001
0
Pulsed
-0.5
-1
-1.5
-2
VF(S-D) - Source to Drain Voltage - V
1000
SWITCHING CHARACTERISTICS
100
td(off)
tf
10
VDD = −30 V
VGS = −10 V
RG = 0 Ω
1
-0.1
-1
tr
td(on)
-10
-100
ID - Drain Current - A
1000
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1
10
100
IF - Diode Forward Current - A
Data Sheet D17210EJ1V0DS
5