2SJ586 Datasheet, PDF (7/10 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Switching

Typical Capacitance vs.
Drain to Source Voltage
100
VGS = 0
50
f=1MHz
Ciss
20
Coss
10
5
Crss
2
10
–4
–8 –12 –16 –20
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
–0.5
Pulse Test
–0.4
VGS = –2.5 V
–0.3
–0.2
2.5 V
–0.1
0V
0
–0.4 –0.8 –1.2 –1.6 –2
Source to Drain Voltage VSD (V)
2SJ586
10000
10000
Switching Characteristics
VGS = –4 V, V _DS = –10 V
PW = 2 µs, duty <= 1 %
tf
1000
t _d(off)
tr
100
t _d(on)
10
–0.0001 -0.001 –0.01 ^{–0.1 –1.0}
Drain Current I _D (A)