R8C3MU_15 Datasheet, PDF (66/93 Pages) Renesas Technology Corp – RENESAS MCU

R8C/3MU Group, R8C/3MK Group
5. Electrical Characteristics
Table 5.39 Flash Memory (Program ROM) Electrical Characteristics
Symbol
Parameter
—
—
—
td(SR-SUS)
—
—
Program/erase endurance ⁽²⁾
Byte program time
Block erase time
Time delay from suspend request until
suspend
Interval from erase start/restart until
following suspend request
Time from suspend until erase restart
Conditions
Min.
1,000 ⁽³⁾
—
—
—
0
—
td(CMDRST Time from when command is forcibly
−
-READY) _{stopped until reading is enabled}
—
Program, erase voltage
2.7
—
Read voltage
1.8
—
Program, erase temperature
0
—
Data hold time ⁽⁷⁾
Ambient temperature = 55 °C
20
Standard
Typ.
Max.
—
—
80
500
0.3
—
—
5 + CPU clock
× 3 cycles
—
—
Unit
times
µs
s
ms
µs
— 30 + CPU clock µs
× 1 cycle
−
30 + CPU clock µs
× 1 cycle
—
5.5
V
—
5.5
V
—
60
°C
—
—
year
Notes:
1. VCC = 2.7 to 5.5 V and Topr = 0 to 60 °C, unless otherwise specified.
2. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 1,000), each block can be erased n times. For example, if 1,024 1-byte
writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the
programming/erasure endurance still stands at one. However, the same address must not be programmed more than once
per erase operation (overwriting prohibited).
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed.)
4. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erasure endurance of each block and limit
the number of erase operations to a certain number.
5. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
6. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7. The data hold time includes time that the power supply is off or the clock is not supplied.
R01DS0112EJ0110 Rev.1.10
Jun 15, 2011
Page 66 of 88