UPC3245TB Datasheet, PDF (6/24 Pages) Renesas Technology Corp – SiGe BiCMOS Integrated Circuit Wideband Amplifier IC with 3-Step Gain Selection

μPC3245TB
TYPICAL CHARACTERISTICS 1 (HIGH-GAIN MODE)
(T_A = +25°C, V_CC = 3.3 V, Gselect = GND, Z_S = Z_L = 50 Ω, unless otherwise specified)
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
40
RF = off
CIRCUIT CURRENT vs.
OPERATING AMBIENT TEMPERATURE
40
RF = off
VCC = 3.6 V
30
20
TA = +85°C
30
3.3 V
3.0 V
20
10
+25°C
−40°C
0
0
1.0
2.0
3.0
4.0
Supply Voltage VCC (V)
10
0
−50
0
50
100
Operating Ambient Temperature TA (°C)
POWER GAIN vs. FREQUENCY
26
VCC = 3.6 V
24
22
20
18
16
3.0 V
3.3 V
14
12
0
1.0
2.0
3.0
4.0
5.0
Frequency f (GHz)
POWER GAIN vs. FREQUENCY
26
TA = −40°C
24
22
20
+25°C
18
+85°C
16
14
12
0
1.0
2.0
3.0
4.0
5.0
Frequency f (GHz)
INPUT RETURN LOSS vs. FREQUENCY
0
INPUT RETURN LOSS vs. FREQUENCY
0
−10
VCC = 3.0 V
TA = +85°C
−10
−20
−30
0
3.3 V
3.6 V
1.0
2.0
3.0
4.0
5.0
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
−20
−30
0
+25°C
−40°C
1.0
2.0
3.0
4.0
5.0
Frequency f (GHz)
R09DS0027EJ0100 Rev.1.00
Sep 26, 2011
Page 6 of 22