RQJ0301HGDQS_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

RQJ0301HGDQS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.3
–0.25
Pulse Test
Tc = 25°C
–0.2
–1.5 A
–0.15
–0.1
–0.05
–1 A
–2.6 A
–2 A
–0.5 A
0
0
–4
–8 –12 –16 –20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Case Temperature
90
Pulse Test
80 V_GS = –4.5 V
70
I_D = –2.6 A
–1.5 A
60
50
–0.5 A
40
30
20
10
–25 0
25 50 75 100 125 150
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
Pulse Test
V_DS = –10 V
10
–25°C
Tc = 75°C
1
25°C
0.1
–0.1
–1.0
Drain Current I_D (A)
–10.0
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
Tc = 25°C
V_DS = –4.5 V
–10 V
30
10
–0.1
–1
–10
Drain Current I_D (A)
Static Drain to Source on State Resistance
vs. Case Temperature
70
Pulse Test
60 ^{VGS = –10 V}
I_D = –2.6 A
–1.5 A
50
40
–0.5 A
30
20
10
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Zero Gate Voltage Drain current vs.
Case Temperature
–1000
–100
Pulse Test
V_GS = 0 V
V_DS = –30 V
–10
–1
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Rev.3.00 Jun 05, 2006 page 4 of 6