RJH60V3BDPE_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – 600V - 17A - IGBT Application: Inverter

RJH60V3BDPE
10000
Typical Capacitance vs.
Collector to Emitter Voltage
1000
Cies
100
Coes
10
V_GE = 0 V
f = 1 MHz
Cres
1 ^{Ta = 25°C}
0 50 100 150 200 250 300
Collector to Emitter Voltage V_CE (V)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
300
V_CC = 300 V
250
I_F = 17 A
200
150
100
Tc = 150°C
50
25°C
0
0
40 80 120 160 200
Diode Current Slope diF/dt (A/μs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
16
V_CC = 300 V
I_F = 17 A
12
8
Tc = 150°C
4
25°C
0
0
40 80 120 160 200
Diode Current Slope di_F/dt (A/μs)
Preliminary
Dynamic Input Characteristics (Typical)
800
16
V_GE
600
12
400
8
200
0
0
4
V_CC = 300 V
I_C = 17 A
V_CE
Tc = 25°C
0
20 40 60 80 100
Gate Charge Qg (nc)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
0.3
V_CC = 300 V
I_F = 17 A
0.2
Tc = 150°C
0.1
25°C
0
0
40 80 120 160 200
Diode Current Slope diF /dt (A/μs)
Forward Current vs. Forward Voltage (Typical)
70
V_GE = 0 V
60 _{Pulse Test}
50
40
30
Tc = 150°C
20
10
25°C
0
0
1
2
3
4
C-E Diode Forward Voltage V_CEF (V)
R07DS0745EJ0200 Rev.2.00
May 25, 2012
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