RJH60F5BDPQ-A0_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – 600V - 40A - IGBT High Speed Power Switching

RJH60F5BDPQ-A0
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
10
Tc = 25°C
Preliminary
1 ^D=1
0.5
0.2
0.1
0.⁰⁵
0.1
0.02 0.01 ^{1 shot pulse}
0.01
10 μ
100 μ
1m
θ_j – c(t) = γs (t) • θ_j – c
θ_j – c = 0.48 °C/W, Tc = 25°C
P_DM
D=
PW
T
PW
T
10 m
100 m
1
10
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
10
Tc = 25°C
D=1
1
0.5
0.2
0.1
0.1 ^0.05
0^.02
0.01
1 shot pulse
0.01
10 μ
100 μ
θ_j – c(t) = γs (t) • θ_j – c
θ_j – c = 1.1°C/W, Tc = 25°C
P_DM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
R07DS0631EJ0100 Rev.1.00
Feb 17, 2012
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