RJH60D7ADPK_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – 600V - 50A - IGBT Application: Inverter

RJH60D7ADPK
10000
Typical Capacitance vs.
Collector to Emitter Voltage
Cies
1000
100
Coes
V_GE = 0 V
f = 1 MHz
Cres
10 ^{Tc = 25°C}
0 50 100 150 200 250 300
Collector to Emitter Voltage V_CE (V)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
300
250
Tc = 150°C
V_CC = 300 V
I_F = 50 A
200
150
100
50
25°C
0
0
40 80 120 160 200
Diode Current Slope di/dt (A/μs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
16
V_CC = 300 V
I_F = 50 A
12
Tc = 150°C
8
25°C
4
0
0
40 80 120 160 200
Diode Current Slope di/dt (A/μs)
Preliminary
Dynamic Input Characteristics (Typical)
800
16
V_CE = 300 V
I_C = 50 A
Tc = 25°C
600
V_GE
12
400
8
200
4
V_CE
0
0
40
0
80 120 160 200
Gate Charge Qg (nc)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
2.0
V_CC = 300 V
I_F = 50 A
1.6
Tc = 150°C
1.2
0.8
25°C
0.4
0
0
40 80 120 160 200
Diode Current Slope di/dt (A/μs)
Forward Current vs. Forward Voltage (Typical)
200
160
Tc = 25°C
120
150°C
80
40
V_CE = 0 V
Pulse Test
0
0
1
2
3
4
C-E Diode Forward Voltage V_CEF (V)
R07DS0547EJ0200 Rev.2.00
Apr 19, 2012
Page 6 of 9