RJH60D1DPP-E0_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – 600V - 10A - IGBT Application: Inverter

RJH60D1DPP-E0
Typical Capacitance vs.
Collector to Emitter Voltage
1000
Tc = 25°C
Cies
100
Coes
10
Cres
V_GE = 0 V
f = 1 MHz
1
0 50 100 150 200 250 300
Collector to Emitter Voltage V_CE (V)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
300
V_CC = 300 V
250
I_F = 10 A
200
150
Tc = 150°C
100
50
25°C
0
0
40 80 120 160 200
Diode Current Slope diF/dt (A/μs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
16
V_CC = 300 V
I_F = 10 A
12
8
Tc = 150°C
4
25°C
0
0
40 80 120 160 200
Diode Current Slope di_F/dt (A/μs)
Preliminary
Dynamic Input Characteristics (Typical)
800
V_CC = 300 V
I_C = 10 A
Tc = 25°C
600
16
V_GE
12
400
8
V_CE
200
4
0
0
0
4
8
12 16 20
Gate Charge Qg (nc)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
0.5
V_CC = 300 V
I_F = 10 A
0.4
0.3
0.2
Tc = 150°C
0.1
25°C
0
0
40 80 120 160 200
Diode Current Slope di_F/dt (A/μs)
Forward Current vs. Forward Voltage (Typical)
40
Tc = 25°C
30
150°C
20
10
V_CE = 0 V
Pulse Test
0
0
1
2
3
4
C-E Diode Forward Voltage V_CEF (V)
R07DS0893EJ0100 Rev.1.00
Nov 01, 2012
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