R2A20056BM_15 Datasheet, PDF (6/38 Pages) Renesas Technology Corp – Lithium-Ion Battery Charger IC with Auto Load Current Distribution

R2A20056BM
Item
Battery voltage detection
Charge control voltage(4.20V)
Charge control voltage(4.15V)
Charge control voltage(4.10V)
Charge control voltage(4.05V)
Charge control voltage(4.00V)
Charge start voltage
Quick charge start voltage
Recharge start voltage
Overvoltage detection voltage
Charge current detection
Quick charge current(1.0C)
Quick charge current(0.5C)
Trickle charge current(0.2C)
Trickle charge current(0.1C)
Charge completion current(0.2C)
Charge completion current(0.1C)
Charge completion current(0.05C)
Timer circuit
Oscillation frequency
Trickle charge timer _*1
Quick charge timer _*1
Weak Battery timer _*1
Chip temperature detection
Chip temperature detection _*1
Chip temperature reset detection_*1
Thermal shutdown temperature_*1
Thermistor detection _*2
THVDD output voltage
Temperature protection detect voltage 1
Temperature protection
detect voltage hysteresis 1
Temperature protection detect voltage 2
Temperature protection
detect voltage hysteresis 2
Temperature protection detect voltage 3
Temperature protection
detect voltage hysteresis 3
Temperature protection detect voltage 4
Temperature protection
detect voltage hysteresis 4
Thermistor connection detect voltage
*1: Design guarantee
*2: NCP15WF104F03RC(MURATA)
Electrical Characteristics
Symbol
(Ta=25degC and Vin=5V, unless otherwise specified.)
Condition
Rated value
Min. Typ. Max.
Unit
V_chg4.20V
V_chg4.15V
V_chg4.10V
V_chg4.05V
V_chg4.00V
V_start
V_qchgon
V_rechg
V_ov
V_CHG=4.20V,I_BAT=0A
V_CHG=4.15V,I_BAT=0A
V_CHG=4.10V,I_BAT=0A
V_CHG=4.05V,I_BAT=0A
V_CHG=4.00V,I_BAT=0A
When V_BAT voltage rising,
100mV Hysteresis
When V_BAT voltage rising,
100mV Hysteresis
When V_BAT voltage falling,
When V_BAT voltage rising
4.179 4.200 4.221 V
4.10 4.15 4.20 V
4.05 4.10 4.15 V
4.00 4.05 4.10 V
3.95 4.00 4.05 V
1.40 1.50 1.60 V
2.90 3.00 3.10 V
3.70 3.80 3.90 V
4.27 4.35 4.43 V
I_chg1.0C
RICHG=(3Kohm),V_BAT=3.5V
450 500 550 mA
I_chg0.5C
RICHG=(3Kohm),V_BAT=3.5V
200 250 300 mA
I_prechg0.2C RICHG=(3Kohm),V_BAT=2.5V
70 100 130 mA
I_prechg0.1C RICHG=(3Kohm),V_BAT=2.5V
35
50
65 mA
I_fc0.2C RICHG=(3Kohm),When CV control 70 100 130 mA
I_fc0.1C RICHG=(3Kohm),When CV control 35
50
65 mA
I_fc0.05C RICHG=(3Kohm),When CV control 10
25
40 mA
F_osc
T_dchg
T_chg
T_wchg
57.6 64.0 70.4 KHz
54
60
66 Min
270 300 330 Min
36
40
44 Min
T_treg
T_trgrst
T_sd
Chip temperature,
10degC Hysteresis
Chip temperature
Chip temperature
110
degC
125
degC
150
degC
V_THVDD
T_THMVL
V_THMVL
T_THML
V_THML
T_THMH
V_THMH
T_THMVH
V_THMVH
T_THCON
Io=0mA
R_pu=100K,R_th=311.6K,
2.5degC(±2.5degC)
2.5degC+2.5degC（±2degC）
R_pu=100K,R_th=184.5K,
12.5degC(±2.5degC)
12.5degC+2.5℃（±2degC）
R_pu=100K,R_th=45.5K,
42.5degC(±2.5degC)
42.5degC-2.5℃（±2degC)
R_pu=100K,R_th=24.5K,
57.5degC(±2.5degC)
57.5degC-2.5degC（±2degC）
R_pu=100K
1.90 2.00 2.10 V
73.15 75.70 78.12 %
17
51
85 mV
61.93 64.85 67.71 %
20
59
98 mV
29.03 31.27 33.63 %
16
47
78 mV
18.18 19.69 21.32 %
11
32
53 mV
90
93
96
%
R03DS0075EJ0100 Rev. 1.23
Apr 15,2013
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