R1EX24008ASA00A_10 Datasheet, PDF (6/24 Pages) Renesas Technology Corp – Two-wire serial interface 8k EEPROM (1-kword × 8-bit)

R1EX24008Axx00A
DC Characteristics (Ta = −40 to +85°C, V_CC = 1.8 V to 5.5 V)
Parameter
Symbol Min Typ Max Unit
Input leakage current
I_LI


2.0 µA
Output leakage current I_LO


2.0 µA
Standby V_CC current
I_SB

1.0 2.0 µA
Read V_CC current
I_CC1


1.0 mA
Write V_CC current
I_CC2


3.0 mA
Output low voltage
V_OL2


0.4 V
V_OL1


0.2 V
Test conditions
V_CC = 5.5 V, Vin = 0 to 5.5 V
V_CC = 5.5 V, Vout = 0 to 5.5 V
Vin = V_SS or V_CC
V_CC = 5.5 V, Read at 400 kHz
V_CC = 5.5 V, Write at 400 kHz
V_CC = 2.7 to 5.5 V, I_OL = 3.0 mA
V_CC = 1.8 to 2.7 V, I_OL = 1.5 mA
Capacitance (Ta = +25°C, f = 1 MHz)
Parameter
Test
Symbol Min
Typ
Max
Unit
conditions
Input capacitance (A0 to A2, SCL, WP) Cin*¹


6.0
pF
Vin = 0 V
Output capacitance (SDA)
Note: 1. Not 100% tested.
C_I/O*¹


6.0
pF
Vout = 0 V
Memory cell characteristics (V_CC = 1.8 V to 5.5 V)
Endurance
Data retention
Notes: 1. Not 100% tested.
Ta=25°C
Ta=85°C
1,000k Cycles min. 100k Cycles min
100 Years min.
10 Years min.
Notes
1
1
REJ03C0351-0100 Rev.1.00 Oct.26, 2009
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