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R1EX24004ASAS0A_15 Datasheet, PDF (6/26 Pages) Renesas Technology Corp – Two-wire serial interface 4k EEPROM (512-word × 8-bit)
R1EX24004AxxS0A
DC Operating Conditions
Parameter
Symbol Min
Typ
Supply voltage
Input high voltage
Input low voltage
Operating temperature
V
CC
V
SS
VIH
VIL
Topr
1.8

0
0
VCC × 0.7

−0.3*1

−40

Notes: 1. VIL (min): −1.0 V for pulse width ≤ 50 ns.
Max
5.5
0
VCC + 0.5
VCC × 0.3
+85
Unit
V
V
V
V
°C
DC Characteristics (Ta = −40 to +85°C, VCC = 1.8 V to 5.5 V)
Parameter
Symbol Min Typ Max Unit
Input leakage current
ILI


2.0
µA
Output leakage current I
LO


2.0
µA
Standby V current
CC
I
SB

1.0
2.0
µA
Read VCC current
ICC1


1.0 mA
Write VCC current
ICC2


2.5 mA
Output low voltage
V
OL2


0.4 V
V
OL1


0.2 V
Test conditions
VCC = 5.5 V, Vin = 0 to 5.5 V
V = 5.5 V, Vout = 0 to 5.5 V
CC
Vin = V or V
SS
CC
VCC = 5.5 V, Read at 400 kHz
VCC = 5.5 V, Write at 400 kHz
V = 2.7 to 5.5 V, I = 3.0 mA
CC
OL
V = 1.8 to 2.7 V, I = 1.5 mA
CC
OL
Capacitance (Ta = +25°C, f = 1 MHz)
Parameter
Symbol Min
Typ
Max
Input capacitance (A0 to A2, SCL, WP) Cin*1


6.0
Output capacitance (SDA)
Note: 1. Not 100% tested.
CI/O*1


6.0
Memory cell characteristics (VCC = 1.8 V to 5.5 V)
Endurance
Data retention
Note: 1. Not 100% tested.
Ta=25°C
Ta=85°C
1,000k Cycles min. 100k Cycles min
100 Years min.
10 Years min.
Unit
pF
pF
Notes
1
1
Test
conditions
Vin = 0 V
Vout = 0 V
REJ03C0353-0101 Rev.1.01 Jan. 9, 2009
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