PA2706GR_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

µPA2706GR
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50
Pulsed
45
40
VGS = 10 V
35
4.5 V
30
4.0 V
25
20
15
10
5
0
0
0.5
1
1.5
2
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3
VDS = 10 V
ID = 1 mA
2.5
2
1.5
1
0.5
0
- 50
0
50
100
150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
30
Pulsed
25
20
VGS = 4.0 V
4.5 V
15
10 V
10
5
0
0.1
1
10
100
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
100
VDS = 10 V
Pulsed
10
TA = −55°C
25°C
75°C
1
150°C
0.1
0.01
0
1
2
3
4
5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
10
TA = −55°C
25°C
75°C
150°C
1
0.1
0.01
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
Pulsed
25
20
15
ID = 5.5 A
10
5
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
4
Data Sheet G16236EJ1V0DS