PA1911A_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
300
VGS = −2.5 V
250
TA = +75°C
TA = +125°C
200
150
100
50
0
−0.01
TA = −25°C
TA = +25°C
−0.10
−1.00 −10.00
ID - Drain Current - A
−100.00
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
200
VGS = −4.5 V
150
TA = +125°C
TA = +75°C
100
50
TA = −25°C
TA = +25°C
0
−0.01
−0.10
−1.00
−10.00
ID - Drain Current - A
−100.00
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
200
ID = −1.5 A
150
100
50
0
0.0 −2.0 −4.0 −6.0 −8.0 −10.0 −12.0
VGS - Gate to Source Voltage - V
µ PA1911A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
200
VGS = −4.0 V
150
TA = +125°C
TA = +75°C
100
50
TA = −25°C
TA = +25°C
0
−0.01
−0.10
−1.00
−10.00
ID - Drain Current - A
−100.00
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
200
ID = −1.5 A
150
VGS = −2.5 V
100
50
VGS = −4.0 V
VGS = −4.5 V
0
−50
0
50
100
150
Tch - Channel Temperature - °C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
f = 1MHZ
VGS = 0V
Ciss
100
Coss
Crss
10
−0.1
−1.0
−10.0
VDS - Drain to Source Voltage - V
−150
4
Data Sheet G15044EJ1V0DS