PA1804_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

µ PA1804
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
50
VGS = 4.5 V
40
TA = 125˚C
30
75˚C
25˚C
20
−25˚C
10
0.01
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
ID = 4.0 A
VGS = 4.5 V
30
10 V
20
10
−50
0
50
100
150
Tch - Channel Temperature - ˚C
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
VGS = 0 V
1000
100
Ciss
Coss
Crss
10
1
10
100
VDS - Drain Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
40
VGS = 10 V
30
TA = 125˚C
75˚C
20
25˚C
−25˚C
10
0.01
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
ID = 4.0 A
40
30
20
10
0
4
8
12
16
20
VGS - Gate to Source Voltage - V
1000
SWITCHING CHARACTERISTICS
100
td(off)
td(on)
10
VDD = 15 V
VGS(on) = 10V
1 ^{RG = 10 Ω}
0.1
1
ID - Drain Current - A
tr
tf
10
4
Data Sheet D13868EJ2V0DS