PA1770_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100.0
80.0
60.0
VGS = −2.5 V
VGS = −4.0 V
40.0
20.0
VGS = −4.5 V
ID = −3.0 A
0.0
−50 −25 0 25 50 75 100 125 150
Tch - Channel Temperature - ˚C
10000
1000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
Ciss
Coss
Crss
10
1
−0.1
VGS = 0 V
f = 1 MHz
−1
−10
−100
VDS - Drain to Source Voltage - V
10000
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/ns
VGS = 0 V
100
10
1
0.1
1
10
100
ID - Drain Current - A
µ PA1770
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
VGS = −2.5 V
10
VGS = 0 V
1
0.1
0.01
0.00
0.50
1.00
VSD - Source to Drain Voltage - V
1.50
1000
SWITCHING CHARACTERISTICS
100
td(off)
tf
10
tr
td(on)
1
−0.1
VDD = −16 V
VGS = −4.5V
RG = 10 Ω
−1
−10
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−30
−6
−25
−20
VDD = −16 V
−15
VDD = −10 V
VDD = −4 V
−10
−5
VGS
−4
−3
−2
−5
VDS
−1
0
0
0 2 4 6 8 10 12 14 16
QG - Gate Charge - nC
4
Data Sheet G14055EJ1V0DS00