NP90N04VUG_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP90N04VUG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
350
300
250
200
150
100
50
0
0
VGS = 10 V
Pulsed
0.2 0.4 0.6 0.8 1 1.2 1.4
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
5
4
3
2
1
0
-75
VDS = VGS
ID = 250 μA
-25 25 75 125 175 225
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
8
VGS = 10 V
Pulsed
6
4
2
0
1
10
100
1000
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000
100
10 _{Tch = −55°C}
−25°C
1
25°C
75°C
0.1
125°C
0.01
150°C
175°C
0.001
0.0001
VDS = 10 V
Pulsed
0
1
2
3
4
5
6
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
Tch = −55°C
−25°C
25°C
75°C
10
125°C
150°C
175°C
1
0.1
VDS = 5 V
Pulsed
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
8
ID = 45 A
Pulsed
6
4
2
0
0
4
8
12
16
20
VGS - Gate to Source Voltage - V
4
Data Sheet D19545EJ1V0DS