NP90N04VDK_15 Datasheet, PDF (6/8 Pages) Renesas Technology Corp – 40 V – 90 A – N-channel Power MOS FET Application: Automotive

NP90N04VDK
Package Drawing (Unit: mm)
TO-252 (MP-3ZP) (Mass: 0.3g TYP.)
6.5±0.2
5.1 TYP.
4.3 MIN.
4
2.3±0.1
0.5±0.1
No Plating
Preliminary
1.13
12
3
1.14 MAX.
2.3 2.3
No Plating
0.76±0.12
0 to 0.25
0.5±0.1
1.0
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Equivalent Circuit
Gate
Drain
Body
Diode
Source
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
R07DS1017EJ0100 Rev.1.00
Feb 21, 2013
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