NP89N055PUK Datasheet, PDF (6/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP89N055PUK
Package Drawing (Unit: mm)
TO-263 (MP-25ZP) (Mass: 1.5 g TYP.)
No plating
10.0 ±0.3
7.88 MIN.
4
0.5
4.45 ±0.2
1.3 ±0.2
0.025
to 0.25
Equivalent Circuit
0.75 ±0.2
2.54
12 3
0.6 _±0.2
0 _{to 8°}
0.25
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Gate
Drain
Body
Diode
Source
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0569EJ0100 Rev.1.00
Nov 17, 2011
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