NP89N04PDK_15 Datasheet, PDF (6/8 Pages) Renesas Technology Corp – 40 V – 90 A – N-channel Power MOS FET Application: Automotive

NP89N04PDK
Package Drawing (Unit: mm)
TO-263 (MP-25ZP) (Mass: 1.48 g TYP.)
No plating
10.0 ±0.3
7.88 MIN.
4
0.5
4.45 ±0.2
1.3 ±0.2
0.025
to 0.25
Preliminary
Equivalent Circuit
0.75 ±0.2
2.54
12 3
0.6 _±0.2
0 _{to 8°}
0.25
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Gate
Drain
Body
Diode
Source
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
R07DS1016EJ0100 Rev.1.00
Feb 21, 2013
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