NP83P06PDG_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – SWITCHING P-CHANNEL POWER MOSFET

-250
-200
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = −10 V
-150
-100
−4.5 V
-50
0
0
Pulsed
-1
-2
-3
-4
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
-3
-2.5
-2
-1.5
-1
-0.5 VDS = −10 V
ID = −1 mA
0
-75 -25 25
75 125 175 225
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
20
15
10
5
0
-1
VGS = −4.5 V
−10 V
Pulsed
-10
-100
ID - Drain Current - A
-1000
NP83P06PDG
FORWARD TRANSFER CHARACTERISTICS
-1000
-100
VDS = −10 V
Pulsed
-10
-1
-0.1
-0.01
-0.001
0
Tch = −55°C
−25°C
25°C
75°C
125°C
150°C
175°C
-1
-2
-3
-4
-5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1000
100
10
Tch = −55°C
−25°C
25°C
75°C
125°C
150°C
175°C
1
VDS = −10 V
Pulsed
0.1
-0.1
-1
-10
ID - Drain Current - A
-100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
20
ID = −83 A
−41.5 A
−17 A
10
Pulsed
0
0
-5
-10
-15
-20
VGS - Gate to Source Voltage - V
4
Data Sheet D18691EJ3V0DS