NP82N055PUG_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
350
VGS = 10 V
300
250
200
150
100
50
Pulsed
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4
3.5
3
2.5
2
1.5
1
0.5
0
-100 -50 0
VDS = VGS
ID = 250 µA
50 100 150 200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
14
Pulsed
12
10
8
6
VGS = 10 V
4
2
0
1
10
100
1000
ID - Drain Current - A
NP82N055PUG
FORWARD TRANSFER CHARACTERISTICS
1000
100
VDS = 10 V
Pulsed
10
1
TA = 175°C
150°C
0.1
125°C
75°C
0.01
−55°C
−25°C
25°C
0.001
01234567
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
10
1
0.1
TA = −55°C
25°C
85°C
125°C
175°C
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
9
Pulsed
8
ID = 82 A
7
41 A
6
16.4 A
5
4
3
2
1
0
0
4
8
12
16
20
VGS - Gate to Source Voltage – V
4
Data Sheet D16859EJ1V0DS