NP82N03PUG_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
350
Pulsed
300
250
200
VGS = 10 V
150
100
50
0
0
0.4 0.8 1.2 1.6
2
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.5
3
2.5
2
1.5
1
0.5 ^{VDS = VGS}
ID = 250 µA
0
-100 -50 0
50 100 150 200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
4
Pulsed
3.5
3
2.5
VGS = 10 V
2
1.5
1
0.5
0
1
10
100
1000
ID - Drain Current - A
NP82N03PUG
FORWARD TRANSFER CHARACTERISTICS
1000
100
VDS = 10 V
Pulsed
10
1
TA = 175°C
150°C
125°C
0.1
75°C
0.01
−55°C
−25°C
25°C
0.001
01234567
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
10
TA = −55°C
25°C
85°C
125°C
175°C
1
0.1
0.1
1
10
100
ID - Drain Current - A
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
Pulsed
9
8
ID = 82 A
7
41 A
6
16.4 A
5
4
3
2
1
0
0
4
8
12
16
20
VGS - Gate to Source Voltage - V
4
Data Sheet D16857EJ1V0DS