NP60N03KUG_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
300
Pulsed
250
200
150
VGS = 10 V
100
50
0
0 0.2 0.4 0.6 0.8 1 1.2
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4.0
3.5
3.0
2.5
2.0
1.5
1.0
VDS = VGS
ID = 250 µA
0.5
Pulsed
0
-100 -50 0 50 100 150 200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
9
8
7
6
5
4
3
2
1
0
1
VGS = 10 V
Pulsed
10
100
1000
ID - Drain Current - A
NP60N03KUG
FORWARD TRANSFER CHARACTERISTICS
1000
100
VDS = 10 V
Pulsed
10
TA = −50°C
1
25°C
125°C
175°C
0.1
0.01
0.001
0
1
2
3
4
5
6
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = −50°C
25°C
125°C
10
175°C
1
0.1
VDS = 10 V
Pulsed
1
10
100
ID - Drain Current - A
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
9
Pulsed
8
ID = 48 A
30 A
7
12 A
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate to Source Voltage - V
4
Data Sheet D16860EJ1V0DS