NP45N06VUK_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – 60 V – 45 A – N-channel Power MOS FET Application: Automotive

NP45N06VUK, NP45N06PUK
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
16
12
8
4
0
–100 –50 0
V_GS = 10 V
I_D = 23 A
Pulsed
50 100 150 200
T_ch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
1000
100
10
1
0.1
V_DD = 30 V
V_GS = 10 V
R_G = 0 Ω
1
10
I_D - Drain Current - A
td(off)
td(on)
tr
tf
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
V_GS = 10 V
V_GS = 0 V
10
1
0.1
0
Pulsed
0.2 0.4 0.6 0.8 1.0 1.2
V_F(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
100
V_GS = 0 V
f = 1 MHz
10
0.1
1
Coss
Crss
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
10
45
VDD = 48 V
9
40
30 V
12 V
8
35
V_GS
7
30
6
25
5
20
4
15
3
10
2
V_DS
5
I_D = 45 A ¹
0
0
0 5 10 15 20 25 30 35
Q_G- Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
di/dt = 100 A/μs
V_GS = 0 V
1
0.1
1
10
100
I_F - Drain Current - A
R07DS0953EJ0100 Rev.1.00
Nov 20, 2012
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