NP29N04QUK Datasheet, PDF (6/9 Pages) Renesas Technology Corp – 40 V – 30 A – Dual N-channel Power MOS FET

NP29N04QUK
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
Pulsed
16
12
8
4
V_GS=10V
I_D=15A
0
-100 -50
0
50 100 150 200
T_ch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
1000
100
V_DD = 20V
V_GS=10V
R_G=0Ω
t_d(off)
td(on)
10
tf
tr
1
0.1
1
10
100
I_D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
V_GS=10V
10
1
V_GS=0V
0.1
0
0.2 0.4 0.6 0.8
Pulsed
1 1.2
V_F(S-D) - Source to Drain Voltage - V
R07DS1329EJ0100 Rev.1.00
Mar 28, 2016
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
100
V_GS = 0V
f = 1.0MHz
10
0.01
0.1
1
Coss
Crss
10
100
V_DS - Drain to Source Voltage - V
35
30
25
20
15
10
5
0
0
DYNAMIC INPUT CHARACTERISTICS
14
V_DD= 32V
12
20V
8V
10
8
6
V_GS
4
V_DS
2
I_D=30A
0
4
8
12
16
20
Q_G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
0.1
di/dt = 100A/μs
V_GS = 0V
1
10
100
I_F - Drain Current - A
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