N0604N-S19-AY Datasheet, PDF (6/8 Pages) Renesas Technology Corp – N-channel MOSFET Low on-state resistance

N0604N
Package Drawing (Unit: mm)
TO-220
10.2 MAX.
8.7 TYP.
3.6±0.2
4.8 MAX.
1.3±0.2
4
1.52±0.2
0.8±0.1
2.54 TYP.
0.5±0.2
2.54 TYP.
2.4±0.2
123
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Chapter Title
Equivalent Circuit
Gate
Drain
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0850EJ0100 Rev.1.00
Aug 27, 2012
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