HAT2215R_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2215R, HAT2215RJ
Static Drain to Source on State Resistance
vs. Temperature
250
Pulse Test
200
I_D = 0.5 A, 1 A, 2 A
150
V_GS = 4.5 V
100
0.5 A, 1 A, 2 A
50 _{10 V}
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
10
1
3
10
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
100
20
I_D = 3.4 A
80
60 _VDS
40
V_DD = 50 V
25 V
10 V
V_GS ¹⁶
12
8
20
V_DD = 50 V
4
25 V
10 V
0
0
2
4
6
8
10
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current
100
30
10
Tc = –25°C
3
1
0.3
25°C
0.1
75°C
0.03
0.01
0.01
V_DS = 10 V
Pulse Test
0.03 0.1 0.3 1 3 10
Drain Current I_D (A)
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
200
100
50
Coss
20
10
5
2
V_GS = 0
f = 1 MHz
Crss
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
100
50
td(off)
20
tf
10
5
tr
td(on)
2 _{VGS = 10 V, VDD = 30 V}
Rg = 4.7 Ω, duty ≤ 1 %
1
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)
Rev.3.00 Dec. 22, 2004 page 4 of 7