HAT2193WP_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2193WP
Dynamic Input Characteristics (Typical)
400
I_D = 7 A
Ta = 25°C
16
V_GS
300
V_DS
200
12
V_DS = 50 V
100 V
200 V
8
100
0
0
V_DS = 200 V
4
100 V
50 V
0
4
8
12 16 20
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
V_DS = 10 V
4
3
I_D = 10 mA
1 mA
0.1 mA
2
1
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
20
V_GS = 0 V
Pulse Test
16 ^{Ta = 25 °C}
12
8
4
00
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
REJ03G1252-0200 Rev.2.00 Jun 25, 2009
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