HAT2070R_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2070R
Static Drain to Source on State Resistance
vs. Temperature
50
Pulse Test
40
30
I_D = 2 A, 5 A 10 A
20
V_GS = 4.5 V
10
10 V
2 A, 5 A, 10 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
10
0.1 0.2
di / dt = 50 A / µs
V_GS = 0, Ta = 25°C
0.5 1 2
5 10 20
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
50
20
I_D = 12 A
40
30
V_DS
20
16
V_GS
12
V_DD = 25 V
10 V ⁸
5V
10
V_DD = 25 V
4
10 V
5V
0
0
0
8
16 24 32 40
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25°C
10
75°C
3
25°C
1
0.3
V_DS = 10 V
Pulse Test
0.1
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
Crss
30
V_GS = 0
f = 1 MHz
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
200
100
td(off)
50
tf
tr
20
td(on)
10
5
2
0.1 0.2
V_GS = 10 V, V_DS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
0.5 1 2 5 10 20
Drain Current I_D (A)
Rev.4.00 Sep 07, 2005 page 4 of 6