HAT2022R_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2022R
Static Drain to Source on State Resistance
vs. Temperature
0.05
Pulse Test
0.04
0.03
0.02
I_D = 2 A, 5 A, 10 A
V_GS = 4 V
0.01
2 A, 5 A, 10 A
10 V
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
0.2
di / dt = 20 A / µs
V_GS = 0, Ta = 25°C
0.5 1 2
5 10 20
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
50
20
I_D = 11 A
40
V_DD = 5 V
16
10 V
25 V
30
12
V_DS
V_GS
20
8
10
V_DD = 25 V
4
10 V
5V
0
0
0
20
40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
50
Tc = –25°C
20
10
25°C
5
75°C
2
1
0.5
0.2
V_DS = 10 V
Pulse Test
0.5 1 2
5 10 20
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
Crss
30
V_GS = 0
f = 1 MHz
10
0
10 20
30 40
50
Drain to Source Voltage V_DS (V)
1000
500
200
100
50
Switching Characteristics
tr
tf
td(off)
td(on)
20 _{VGS = 4 V, VDD = 10 V}
PW = 3 µs, duty ≤ 1 %
10
0.2 0.5 1 2
5
10 20
Drain Current I_D (A)
Rev.12.00 Sep 07, 2005 page 4 of 6