HAT1021R_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1021R
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
0.16
0.12
0.08
V_GS = –2.5 V
–1 A, –2 A
I_D = –5 A
0.04
–1 A, –2 A, –5 A
–4 V
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
–0.1 –0.2
di / dt = 20 A / µs
V_GS = 0, Ta = 25°C
–0.5 –1 –2 –5 –10
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
0
0
V_DD = –5 V
–10 V
–10
–20 V
–2
–20
V_DS
V_GS
–30
V_DD = –20 V
–10 V
–40
–5 V
I_D = –5.5 A
–50
0
8
16
24 32
Gate Charge Qg (nc)
–4
–6
–8
–10
40
Forward Transfer Admittance vs.
Drain Current
50
20
Tc = –25°C
10
5
75°C
25°C
2
1
0.5
–0.2 –0.5 –1 –2
V_DS = –10 V
Pulse Test
–5 –10 –20
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
Crss
30
V_GS = 0
f = 1 MHz
10
0
–4
–8 –12 –16 –20
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
td(off)
200
100
tr
tf
50
td(on)
20
10 _{VGS = –4 V, VDD = –10 V}
PW = 3 µs, duty ≤ 1 %
5
–0.1 –0.2 –0.5 –1 –2
–5 –10
Drain Current I_D (A)
Rev.6.00 Sep 07, 2005 page 4 of 6