HAT1020R_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1020R
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
0.16
0.12
0.08
V_GS = –4 V
I_D = –5 A
–2 A, –1 A
0.04
0
–40
–10 V
–5 A, –2 A, –1 A
0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
–0.2
–0.5 –1
di / dt = 20 A / µs
V_GS = 0, Ta = 25°C
–2 –5 –10 –20
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
0
0
V_DD = –5 V
–10 V
–10
–25 V
–4
–20
V_GS
–30 ^VDS
V_DD = –25 V
–10 V
–40
–5 V
I_D = –5 A
–50
0
8
16 24 32
Gate Charge Qg (nc)
–8
–12
–16
–20
40
Forward Transfer Admittance vs.
Drain Current
20
10
Tc = –25°C
5
25°C
2
75°C
1
0.5
0.2
–0.2 –0.5 –1 –2
V_DS = –10 V
Pulse Test
–5 –10 –20
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
Crss
30
V_GS = 0
f = 1 MHz
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
200
tr
100
tf
50
td(off)
20
td(on)
10 _{VGS = –4 V, VDD = –10 V}
PW = 3 µs, duty ≤ 1 %
5
–0.1 –0.2 –0.5 –1 –2
–5 –10
Drain Current I_D (A)
Rev.10.00 Sep 07, 2005 page 4 of 6