HA17384SPS Datasheet, PDF (6/29 Pages) Hitachi Semiconductor – High Speed Current Mode PWM Control IC for Switching Power Supply

HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
Absolute Maximum Ratings (cont.)
Notes: 2. This is the value when the device is mounted on a glass-epoxy substrate (40 mm × 40 mm × 1.6 mm).
However,
For the HA17384HRP and HA17385HRP,
Derating should be performed with 8.3 mW/°C in the Ta ≥ 43°C range if the substrate wiring density is 10%.
Derating should be performed with 11.1 mW/°C in the Ta ≥ 63°C range if the substrate wiring density is 30%.
For the HA17384SRP,
Derating should be performed with 8.3 mW/°C in the Ta ≥ 68°C range if the substrate wiring density is 10%.
Derating should be performed with 11.1 mW/°C in the Ta ≥ 89°C range if the substrate wiring density is 10%.
800
680 mW
600
500 mW
HA17384SRP
: −11.1 mW/°C (wiring density is 30%)
: −8.3 mW/°C (wiring density is 10%)
HA17384HRP, HA17385HRP
: −11.1 mW/°C (wiring density is 30%)
: −8.3 mW/°C (wiring density is 10%)
400 374 mW
222 mW
200
166 mW
0
−20
0
43°C 63°C 68°C 89°C 105°C 125°C
20
40
60
80
100
120
140
Ambient Temperature Ta (°C)
3. Applies to the HA17384HPS/HRP and HA17385HPS/HRP.
4. Applies to the HA17384SPS/SRP.
150°C
160
Rev.3.00 Jun 15, 2005 page 6 of 28