H7P0601DL_15 Datasheet, PDF (6/13 Pages) Renesas Technology Corp – Silicon P Channel MOS FET High Speed Power Switching

H7P0601DL, H7P0601DS
Main Characteristics
Power vs. Temperature Derating
50
40
30
20
10
0 25 50 75 100 125 150
Case Temperature Tc (°C)
Maximum Safe Operation Area
−100
−30
−10
−3
−1
−0.3
(TcD=C _2O^P₅^W_p°eC⁼_r)¹_a⁰_tio^m1_n¹_s⁰₍^0m_1s^1µs_h^0s_ot^µ₎ ^s
Operation in this area
is limited by R_DS(on)
−0.1
−0.03
Ta = 25°C
−0.01
−0.1 −0.3 −1 −3 −10 −30 −100
Drain to Source Voltage V_DS (V)
Typical Output Characteristics
−50
−10 V
Pulse Test
−8 V
−40
−6 V
−5 V
−30
−20
−4 V
−10
V _GS = −2 V
−3 V
0
−2 −4 −6 −8 −10
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
−50
V _DS = -10 V
Pulse Test
−40
75°C
25°C
Tc = -75°C
−30
−20
−10
0
−2
−4
−6
−8
Gate to Source Voltage V_GS (V)
Rev.1.00, Aug.05.2003, page 4 of 10