FY6BCH-02_15 Datasheet, PDF (6/7 Pages) Renesas Technology Corp – HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
1.0
TC = 25°C
Pulse Test
0.8
0.6
ID = 12A
0.4
6A
3A
0.2
0
0 1.0 2.0 3.0 4.0 5.0
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
TC = 25°C
VDS = 10V
Pulse Test
16
12
8
4
0
0 1.0 2.0 3.0 4.0 5.0
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
10³
7
5
4
3
2
10²
7
5
4 ^{TCh = 25°C}
3 ^{f = 1MHZ}
2 ^{VGS = 0V}
10^–1 2 3 4 5
7 10⁰
Ciss
Coss
Crss
2 3 4 5 7 10¹
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FY6BCH-02
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
100
TC = 25°C
Pulse Test
80
60
VGS = 2.5V
40
4V
20
0
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
10²
VDS = 10V
7 _{Pulse Test}
5
4
3
TC = 25°C
75°C
2
125°C
10¹
7
5
4
3
2
10⁰
5
7 10⁰
2 3 4 5 7 10¹
2 3 45
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
10²
7
5
4 tr
3
td(off)
tf
2
td(on)
10¹
7
5 ^{TCh = 25°C}
4 VDD = 10V
3 ^{VGS = 4V}
2 ^{RGEN = RGS = 50Ω}
10^–1 2 3 4 5 7 10⁰
2 3 4 5 7 10¹
DRAIN CURRENT ID (A)
Sep. 2001