FS70SMJ-03_15 Datasheet, PDF (6/7 Pages) Renesas Technology Corp – HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
2.0
TC = 25°C
Pulse Test
1.6
1.2
ID = 100A
0.8
70A
0.4
30A
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
100
TC = 25°C
VDS = 10V
80
Pulse Test
60
40
20
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
Tch = 25°C
10⁴
f = 1MHZ
7
VGS = 0V
5
3
Ciss
2
10³
7
Coss
5
3
Crss
2
10²
7
5
3
2
3 5 710⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS70SMJ-03
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
20
TC = 25°C
Pulse Test
16
VGS = 4V
12
8
10V
4
0
10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3 5 7 10³
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10²
7
5
TC = 25°C
4
3
2
75°C
125°C
10¹
7
5
4
3
2
10⁰₁₀₀
2 3 4 5 7 10¹
VDS = 10V
Pulse Test
2 3 4 5 7 10²
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
Tch = 25°C
7 _{VDD = 15V}
5 _{VGS = 10V}
4 _{RGEN = RGS = 50Ω}
3
td(off)
2
tf
10²
tr
7
5
4
3
td(on)
2
10¹
10⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
DRAIN CURRENT ID (A)
Feb.1999