FS16KM-10_15 Datasheet, PDF (6/7 Pages) Renesas Technology Corp – HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
20
ID = 25A
16
TC = 25°C
Pulse Test
12
16A
8
4
8A
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
40
TC = 25°C
VDS = 50V
32
Pulse Test
24
16
8
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10⁴
7
5
3
2
Ciss
10³
7
5
3
2
Coss
10²
7
5
3 Tch = 25°C
Crss
2 _{f = 1MHz}
10^{1 VGS = 0V}
3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS16KM-10
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
1.0
TC = 25°C
Pulse Test
0.8
VGS = 10V
20V
0.6
0.4
0.2
0
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10²
7
VDS = 10V
Pulse Test
5
3
2
10¹
7
5
TC = 25°C
3
125°C ^75°C
2
10⁰
10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
7
Tch = 25°C
VDD = 200V
5
VGS = 10V
RGEN = RGS = 50Ω
3
2
td(off)
10²
tf
7
5
tr
3
td(on)
2
10¹
10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
DRAIN CURRENT ID (A)
Feb.1999