FS14UM-10_15 Datasheet, PDF (6/7 Pages) Renesas Technology Corp – HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
40
TC = 25°C
Pulse Test
32
ID = 25A
24
20A
16
14A
8
7A
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
40
TC = 25°C
VDS = 50V
32
Pulse Test
24
16
8
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
5
3
2
Ciss
10³
7
5
3
2
Coss
10²
7
5
3 Tch = 25°C
2 f = 1MHz
Crss
VGS = 0V
10¹
2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS14UM-10
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
2.0
TC = 25°C
Pulse Test
1.6
VGS = 10V
1.2
20V
0.8
0.4
0
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10²
7
5
TC = 25°C
75°C
3
2
125°C
10¹
7
5
3
2
10⁰₁₀₀
23
5 7 10¹
VDS = 10V
Pulse Test
2 3 5 7 10²
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
7
Tch = 25°C
VDD = 200V
5
VGS = 10V
RGEN = RGS = 50Ω
3
2
td(off)
10²
7
5
tf
tr
3
td(on)
2
10¹
10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
DRAIN CURRENT ID (A)
Feb.1999