BB503C Datasheet, PDF (6/11 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB503C
Forward Transfer Admittance
vs. Gate1 Voltage
30
V_DS = 5 V
R_G = 47 kΩ
24 _{f = 1 kHz}
4V
3V
2V
18
12
6
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Power Gain vs. Gate Resistance
30
25
20
15
10 _{VDS = VG1 = 5 V}
V_G2S = 4 V
5 f = 900 MHz
0
10
20
50
100
Gate Resistance R_G (kΩ)
Power Gain vs. Drain Current
30
25
20
15
10 ^VDS ^{= V}G1 ^{= 5 V}
V_G2S = 4 V
5 ^RG ^{= variable}
f = 900 MHz
0
0
5
10
15
20
Drain Current I_D (mA)
Rev.5.00 Aug 10, 2005 page 6 of 10
Forward Transfer Admittance
vs. Gate1 Voltage
30
V_DS = 5 V
R_G = 68 kΩ
24 _{f = 1 kHz}
4V
3V
18
2V
12
6
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Noise Figure vs. Gate Resistance
4
V_DS = V_G1 = 5 V
V_G2S = 4 V
3 ^{f = 900 MHz}
2
1
0
10
20
50
100
Gate Resistance R_G (kΩ)
Noise Figure vs. Drain Current
4
V_DS = V_G1 = 5 V
V_G2S = 4 V
3 _{RG = variable}
f = 900 MHz
2
1
0
0
5
10
15
20
Drain Current I_D (mA)