2SK3901_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
150
VGS = 10 V
100
4.5 V
50
Pulsed
0
0
1
2
3
4
5
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3
VDS = 10 V
2.5
ID = 1 mA
2
1.5
1
0.5
0
-75 -25
25
75 125 175
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
Pulsed
30
20
10
0
1
VGS = 4.5 V
10 V
10
100
ID - Drain Current - A
1000
2SK3901
FORWARD TRANSFER CHARACTERISTICS
1000
100
TA = 150°C
75°C
10
25°C
−55°C
1
0.1
0.01
0.001
1
VDS = 10 V
Pulsed
2
3
4
5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
10
TA = 150°C
75°C
25°C
−55°C
1
0.1
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
ID = 30 A
Pulsed
30
20
10
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate to Source Voltage - V
4
Data Sheet D17176EJ1V0DS