2SK3481_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
10
TTAA== −−4400˚˚CC
1
2255˚˚CC
7755˚˚CC
115500˚˚CC
0.1
0.01
1
VDS = 10 V
2
3
4
5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 _{VDS = 10 V}
Pulsed
10
TA = 150˚C
1
75˚C
25˚C
−40˚C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
80
Pulsed
60
VGS = 4.5 V
40
10 V
20
0
0.1
1
10
100
ID - Drain Current - A
2SK3481
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
80
60
VGS = 10 V
40
4.5 V
20
Pulsed
0
0
1
2
3
4
5
6
VDS - Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
Pulsed
60
ID = 30 A
40
15 A
20
00
5
10
15
20
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
4
VDS = 10 V
ID = 1 mA
3
2
1
0
−50
0
50
100
150
Tch - Channel Temperature - ˚C
4
Data Sheet D15063EJ1V0DS