2SK1169_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET

2SK1169, 2SK1170
Static Drain to Source on State
Resistance vs. Temperature
1.0
0.8
V_GS = 10 V
Pulse Test
0.6
I_D = 20 A
0.4
10 A
0.2
5A
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
Body to Drain Diode Reverse
Recovery Time
5,000
2,000
di/dt = 100 A/µs, Ta = 25°C
V_GS = 0
Pulse Test
1,000
500
200
100
50
0.5 1.0 2
5 10 20 50
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
500
20
V_DD = 100 V
400
250 V
16
400 V
300
12
V_DS
V_GS
200
8
100
V _DD = 400 V
I_D = 20 A ₄
250 V
100 V
0
0
40 80 120 160 200
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
V_DS = 20 V
20 Pulse Test
10
–25°C
T_C = 25°C
75°C
5
2
1.0
0.5
0.2
0.5 1.0 2
5 10 20
Drain Current I_D (A)
10,000
Typical Capacitance
vs. Drain to Source Voltage
V_GS = 0
f = 1 MHz
Ciss
1,000
Coss
100
Crss
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
200
t_{d (off)}
100
t_f
50
t_r
t_{d (on)}
20
V_GS = 10 V
V_DD
=•
•
30
V
10 ^{PW = 2 µs, duty < 1%}
5
0.5 1.0 2
5 10 20
50
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 6