2SJ648_15 Datasheet, PDF (6/8 Pages) Renesas Technology Corp – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
4
ID = −0.20 A
Pulsed
3
2
1
0
0
-2
-4
-6
-8
- 10 - 12
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
4
VGS = −4.0 V
Pulsed
3
TA = 125°C
75°C
2
1
25°C
−25°C
0
- 0.01
- 0.1
-1
- 10
ID - Drain Current - A
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
100
VGS = 0 V
f = 1.0 MHz
Ciss
Coss
10
Crss
1
- 0.1
-1
- 10
VDS - Drain to Source Voltage - V
- 100
2SJ648
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
4
VGS = −4.5 V
Pulsed
3
TA = 125°C
75°C
2
1
25°C
−25°C
0
- 0.01
- 0.1
-1
- 10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
4
TA = 125°C
75°C
VGS = −2.5 V
Pulsed
3
2
25°C
1
−25°C
0
- 0.01
- 0.1
-1
- 10
ID - Drain Current - A
SWITCHING CHARACTERISTICS
1000
VDD = −10 V
VGS = −4.0 V
RG = 10 Ω
100
tr
td(off)
tf
td(on)
10
- 0.01
- 0.1
-1
- 10
ID - Drain Current - A
4
Data Sheet D16597EJ2V0DS