2SJ626_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

2SJ626
-6
Pulsed
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = −10 V
-4
−4.5 V
-2
−4.0 V
0
0
-1
-2
-3
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
- 2.6
- 2.4
VDS = −10 V
ID = −1.0 mA
- 2.2
-2
- 1.8
- 1.6
-50
0
50
100
150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
800
Pulsed
ID = −1.0 A
VGS = −4.0 V
600
−4.5 V
−10 V
400
FORWARD TRANSFER CHARACTERISTICS
-10
Pulsed
VDS = −10 V
-1
-0.1
-0.01
TA = 125°C
75°C
25°C
−25°C
-0.001
-0.0001
-1
-2
-3
-4
-5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
Pulsed
VDS = −10 V
1
TA = −25°C
25°C
75°C
0.1
125°C
0.01
-0.01
-0.1
-1
-10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs.GATE TO SOURCE VOLTAGE
800
Pulsed
ID = −1.0 A
600
400
200
200
0
-50
0
50
100
150
Tch – Channel Temperrature - °C
0
0
-4
-8
- 12
- 16
- 20
VGS - Gate to Source Voltage - V
4
Data Sheet D15962EJ1V0DS