2SJ624-T1B-A Datasheet, PDF (6/10 Pages) Renesas Technology Corp – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-20
Pulsed
-16
VGS = −4.5 V
-12
−2.5 V
-8
−1.8 V
-4
0
0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-1
VDS = −10 V
ID = −1.0 mA
-0.8
-0.6
-0.4
2SJ624
FORWARD TRANSFER CHARACTERISTICS
-100
-10
VDS = −10 V
Pulsed
-1
-0.1
-0.01
TA = 125°C
75°C
25°C
−25°C
-0.001
-0.0001
0 -0.4 -0.8 -1.2 -1.6 -2 -2.4
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = −10 V
Pulsed
TA = −25°C
10
25°C
75°C
125°C
1
-0.2
-50
0
50
100
150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
Pulsed
80
VGS = −1.8 V, ID = −1.5 A
0.1
-0.01
-0.1
-1
-10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
Pulsed
80
60
60
40
VGS = −2.5 V, ID = −2.5 A
40
VGS = −4.5 V, ID = −2.5 A
20
-50
0
50
100
150
20
0
Tch - Channel Temperature - °C
4
Data Sheet D15890EJ1V0DS
ID = −2.5 A
-2
-4
-6
-8
VGS - Gate to Source Voltage - V