2SJ160_15 Datasheet, PDF (6/8 Pages) Renesas Technology Corp – Silicon P Channel MOS FET

2SJ160, 2SJ161, 2SJ162
1000
Input Capacitance vs.
Gate to Source Voltage
500
200
V_DS = –10 V
f = 1 MHz
100
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Forward Transfer Admittance vs.
Frequency
3
1
0.3
0.1
0.03
0.01
Tc = 25°C
V_DS = –10 V
I_D = –2 A
0.003
10 k 30 k 100 k 300 k 1 M 3 M 10 M
Frequency f (Hz)
Switching Time vs. Drain Current
500
200
ton
100
50
toff
20
10
5
–0.1 –0.2 –0.5 –1 –2
–5 –10
Drain Current I_D (A)
Switching Time Test Circuit
Input
Output
R_L
PW = 50 µs
duty ratio = 1%
50 Ω
–20 V
Waveform
Input
10%
ton
Output
90%
90%
toff
10%
Rev.2.00 Sep 07, 2005 page 4 of 5