2SC4093_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD

2SC4093
NOISE FIGURE vs.
COLLECTOR CURRENT
7
VCE = 10 V
6
f = 1.0 GHz
5
4
3
2
1
0
0.5 1
5 10 20
50 70
Collector Current IC (mA)
Remark The graph indicates nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/
4
Data Sheet PU10519EJ01V0DS